參數(shù)資料
型號(hào)： M28W640FCT10N6
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 55/55頁(yè)
文件大?。?/td> 1141K
代理商： M28W640FCT10N6
9/55
M28W640FCT, M28W640FCB
SIGNAL DESCRIPTIONS
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A21). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Write Bus
operation.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
at VILand Reset is at VIH the device is in active
mode. When Chip Enable is at VIH the memory is
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
each block. When Write Protect is at VIL, the Lock-
Down is enabled and the protection status of the
block cannot be changed. When Write Protect is at
VIH, the Lock-Down is disabled and the block can
be locked or unlocked. (refer to Table 7., Read
Reset (RP). The Reset input provides a hard-
ware reset of the memory. When Reset is at VIL,
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
mized. After Reset all blocks are in the Locked
state. When Reset is at VIH, the device is in normal
operation. Exiting reset mode the device enters
read array mode, but a negative transition of Chip
Enable or a change of the address is required to
ensure valid data outputs.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
VPP Program Supply Voltage. VPP is both a
control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin. The Supply Voltage VDD and the
Program Supply Voltage VPP can be applied in
any order.
If VPP is kept in a low voltage range (0V to 3.6V)
VPP is seen as a control input. In this case a volt-
age lower than VPPLK gives an absolute protection
against program or erase, while VPP > VPP1 en-
ables these functions (see Table 15., DC Charac-
teristics, for the relevant values). VPP is only
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effect on Program or Erase,
however for Double or Quadruple Word Program
the results are uncertain.
If VPP is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition VPP must be
stable until the Program/Erase algorithm is com-
pleted (see Table 17. and Table 18.).
VSS Ground. VSS is the reference for all voltage
measurements.
Note: Each device in a system should have
VDD, VDDQ and VPP decoupled with a 0.1F ca-
pacitor close to the pin. See Figure 8., AC Mea-
surement Load Circuit. The PCB track widths
should be sufficient to carry the required VPP
program and erase currents.
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