參數(shù)資料
型號(hào)： M28W640FCT10N6
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 4/55頁
文件大小： 1141K
代理商： M28W640FCT10N6
M28W640FCT, M28W640FCB
12/55
■
The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
Erase aborts if Reset turns to VIL. As data integrity
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
During Erase operations the memory will accept
the Read Status Register command and the Pro-
gram/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
and Pseudo Code, for a suggested flowchart for
using the Erase command.
Program Command
The memory array can be programmed word-by-
word. Two bus write cycles are required to issue
the Program Command.
■
The first bus cycle sets up the Program
command.
■
The second latches the Address and the Data
to be written and starts the Program/Erase
Controller.
During Program operations the memory will ac-
cept the Read Status Register command and the
Program/Erase Suspend command. Typical Pro-
gram times are given in Table 8., Program, Erase
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
chart and Pseudo Code, for the flowchart for using
the Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
ed when VPP is not at VPPH.
Three bus write cycles are necessary to issue the
Double Word Program command.
■
The first bus cycle sets up the Double Word
Program Command.
■
The second bus cycle latches the Address and
the Data of the first word to be written.
■
The third bus cycle latches the Address and
the Data of the second word to be written and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to VIL. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
chart for using the Double Word Program
command.
Quadruple Word Program Command
This feature is offered to improve the programming
throughput, writing a page of four adjacent words
in parallel.The four words must differ only for the
addresses A0 and A1. Programming should not be
attempted when VPP is not at VPPH.
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
■
The first bus cycle sets up the Quadruple
Word Program Command.
■
The second bus cycle latches the Address and
the Data of the first word to be written.
■
The third bus cycle latches the Address and
the Data of the second word to be written.
■
The fourth bus cycle latches the Address and
the Data of the third word to be written.
■
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to VIL. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
flowchart for using the Quadruple Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
相關(guān)PDF資料
PDF描述
M28W640FCT85ZB1 4M X 16 FLASH 3V PROM, 85 ns, PBGA48
M28W800B100N1T 512K X 16 FLASH 3V PROM, 100 ns, PDSO48
M293 EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS
M29DW324DT90ZA6F 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
M29DW640F70N6F 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W640FCT70N6E 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FCT70N6F 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FCT70ZB6E 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FSB70ZA6E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
M28W640FSB70ZA6F 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*