參數資料
型號： M28W160ECB70ZB6F
廠商： 意法半導體
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引導塊）3V電源快閃記憶體
文件頁數： 22/50頁
文件大?。?/td> 860K
代理商： M28W160ECB70ZB6F
M28W160ECT, M28W160ECB
22/50
Table 14. DC Characteristics
Symbol
I
LI
Input Leakage Current
I
LO
Output Leakage Current
I
DD
Supply Current (Read)
Supply Current (Stand-by or
Automatic Stand-by)
Parameter
Test Condition
0V
≤
V
IN
≤
V
DDQ
0V
≤
V
OUT
≤
V
DDQ
E = V
SS
, G = V
IH
, f = 5MHz
E = V
DDQ
± 0.2V,
RP = V
DDQ
± 0.2V
Min
Typ
Max
±1
±10
Unit
μA
μA
9
18
mA
I
DD1
15
50
μA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
15
50
μA
I
DD3
Supply Current (Program)
Program in progress
V
PP
= 12V ± 5%
Program in progress
V
PP
= V
DD
Erase in progress
V
PP
= 12V ± 5%
Erase in progress
V
PP
= V
DD
E = V
DDQ
± 0.2V,
Erase suspended
5
10
mA
10
20
mA
I
DD4
Supply Current (Erase)
5
20
mA
10
20
mA
I
DD5
Supply Current
(Program/Erase Suspend)
Program Current
(Read or Stand-by)
Program Current
(Read or Stand-by)
Program Current (Reset)
15
50
μA
I
PP
V
PP
> V
DD
400
μA
I
PP1
V
PP
≤
V
DD
1
5
μA
I
PP2
RP = V
SS
± 0.2V
Program in progress
V
PP
= 12V ± 5%
Program in progress
V
PP
= V
DD
Erase in progress
V
PP
= 12V ± 5%
Erase in progress
V
PP
= V
DD
1
5
μA
I
PP3
Program Current (Program)
1
10
mA
1
5
μA
I
PP4
Program Current (Erase)
3
10
mA
1
5
μA
V
IL
Input Low Voltage
–0.5
–0.5
0.4
0.8
V
V
V
V
DDQ
≥
2.7V
V
IH
Input High Voltage
V
DDQ
–0.4
0.7 V
DDQ
V
DDQ
+0.4
V
DDQ
+0.4
V
DDQ
≥
2.7V
V
V
OL
Output Low Voltage
I
OL
= 100μA, V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
I
OH
= –100μA, V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
0.1
V
V
OH
Output High Voltage
V
DDQ
–0.1
V
V
PP1
Program Voltage (Program or
Erase operations)
Program Voltage
(Program or Erase
operations)
Program Voltage
(Program and Erase lock-out)
V
DD
Supply Voltage (Program
and Erase lock-out)
1.65
3.6
V
V
PPH
11.4
12.6
V
V
PPLK
1
V
V
LKO
2
V
相關PDF資料
PDF描述
M28W160ECB70ZB6S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
M28W160ECB85N1F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
相關代理商/技術參數
參數描述
M28W160ECB70ZB6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA
M28W160ECB85N1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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