參數(shù)資料
型號(hào)： M28W160ECB70ZB6F
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 14/50頁(yè)
文件大?。?/td> 860K
代理商： M28W160ECB70ZB6F
M28W160ECT, M28W160ECB
14/50
Table 3. Commands
Note: 1. X = Don't Care.
2. The signature addresses are listed in Tables
4
,
5
and
6
.
3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
Table 4. Read Electronic Signature
Note:
RP = V
IH
.
Commands
No. of
Cycles
Bus Write Operations
1st Cycle
2nd Cycle
3nd Cycle
Bus
Op.
Addr
Data
Bus
Op.
Addr
Data
Bus
Op.
Addr
Data
Read Memory Array
1+
Write
X
FFh
Read
Read
Addr
Data
Read Status Register
1+
Write
X
70h
Read
X
Status
Register
Read Electronic Signature
1+
Write
X
90h
Read
Signature
Addr
(2)
Signature
Read CFI Query
1+
Write
X
98h
Read
CFI Addr
Query
Erase
2
Write
X
20h
Write
Block
Addr
D0h
Program
2
Write
X
40h or
10h
Write
Addr
Data Input
Double Word Program
(3)
3
Write
X
30h
Write
Addr 1
Data Input
Write
Addr 2
Data
Input
Clear Status Register
1
Write
X
50h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Block Lock
2
Write
X
60h
Write
Block
Address
01h
Block Unlock
2
Write
X
60h
Write
Block
Address
D0h
Block Lock-Down
2
Write
X
60h
Write
Block
Address
2Fh
Protection Register
Program
2
Write
X
C0h
Write
Address
Data Input
Code
Device
E
G
W
A0
A1
A2-A7
A8-A19
DQ0-DQ7
DQ8-DQ15
Manufacture.
Code
V
IL
V
IL
V
IH
V
IL
V
IL
0
Don't Care
20h
00h
Device Code
M28W160ECT
V
IL
V
IL
V
IH
V
IH
V
IL
0
Don't Care
CEh
88h
M28W160ECB
V
IL
V
IL
V
IH
V
IH
V
IL
0
Don't Care
CFh
88h
相關(guān)PDF資料
PDF描述
M28W160ECB70ZB6S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
M28W160ECB85N1F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W160ECB70ZB6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA
M28W160ECB85N1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*