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參數(shù)資料
| 型號： | M25PE40 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 50/60頁 |
| 文件大?。?/td> | 315K |
| 代理商： | M25PE40 |
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DC and AC parameters
M25PE40
50/60
AC characteristics (50 MHz operation,
T9HX (0.11μm) process
(1)
)
(2)
(3)
Table 20.
Test conditions specified in
Table 14
and
Table 15
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
D.C.
50
MHz
f
R
Clock Frequency for READ instructions
D.C.
33
MHz
t
CH(4)
t
CL(4)
t
CLH
t
CLL
Clock High Time
9
ns
Clock Low Time
Clock Slew Rate
2
(peak to peak)
S Active Setup Time (relative to C)
9
ns
0.1
V/ns
t
SLCH
t
CHSL
t
DVCH
t
CHDX
t
CHSH
t
SHCH
t
SHSL
t
SHQZ(5)
t
CLQV
t
CLQX
t
WHSL(6)
t
SHWL(6)
t
DP(5)
t
RDP(5)
t
W
t
PW(7)
t
CSS
5
ns
S Not Active Hold Time (relative to C)
5
ns
t
DSU
t
DH
Data In Setup Time
2
ns
Data In Hold Time
5
ns
S Active Hold Time (relative to C)
5
ns
S Not Active Setup Time (relative to C)
5
ns
t
CSH
t
DIS
t
V
t
HO
S Deselect Time
100
ns
Output Disable Time
8
ns
Clock Low to Output Valid
8
ns
Output Hold Time
0
ns
Write Protect Setup Time
50
ns
Write Protect Hold Time
100
ns
S to Deep Power-down
3
μs
S High to Standby Mode
30
μs
Write Status Register Cycle Time
3
15
ms
Page Write Cycle Time (256 bytes)
11
23
ms
t
PP(7)
Page Program Cycle Time (256 bytes)
0.8
3
ms
Page Program Cycle Time (n bytes)
int(n/8) × 0.025
(8)
t
PE
t
SE
t
SSE
t
BE
Page Erase Cycle Time
10
20
ms
Sector Erase Cycle Time
1
5
s
SubSector Erase Cycle Time
40
150
ms
Bulk Erase Cycle Time
5
10
s
1.
See
Important note on page 6
.
2.
Preliminary data.
3.
Details of how to find the Technology Process in the marking are given in AN1995, see also
Section 13: Part numbering
.
4.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
5.
6.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1
≤
n
≤
256).
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
8.
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PDF描述 |
|---|---|
| M25PE40VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40S-VMW6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40S-VMW6TG | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25PE40S-VMW6TG TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40-VMC6G | 功能描述:IC SRL FLSH 4MB 75MHZ 8MLP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25PE40-VMC6TG | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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