參數(shù)資料
型號(hào): M25P80VMN6T
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 8/34頁
文件大?。?/td> 217K
代理商: M25P80VMN6T
M25P05-A
8/34
MEMORY ORGANIZATION
The memory is organized as:
I
65,536 bytes (8 bits each)
I
2 sectors (256 Kbits, 32768 bytes each)
I
256 pages (256 bytes each).
Each page can be individually programmed (bits
are programmed from 1 to 0). The device is Sector
or Bulk Erasable (bits are erased from 0 to 1) but
not Page Erasable.
Table 3. Memory Organization
Figure 7. Block Diagram
Sector
Address Range
1
08000h
0FFFFh
0
00000h
07FFFh
AI05759
HOLD
S
W
Control Logic
High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 Byte
Data Buffer
256 Bytes (Page Size)
X Decoder
Y
C
D
Q
Status
Register
00000h
08000h
0FFFFh
000FFh
Size of the
read-only
memory area
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P80-VMN6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface
M25P80VMN6TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
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M25P80VMN6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
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