參數(shù)資料
型號(hào): M25P80VMN6T
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 24/34頁(yè)
文件大小: 217K
代理商: M25P80VMN6T
M25P05-A
24/34
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Note: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
(20 seconds max.)
1
SO
235
°C
VFQFPN
235
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–2000
2000
V
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