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參數(shù)資料
| 型號： | M25P40-VMP6T |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 39/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMP6T |
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M25P40
REVISION HISTORY
Table 22. Document Revision History
Date
Rev.
Description of Revision
12-Apr-2001
1.0
Document written
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection modes;
Release from Power-down and Read Electronic Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
IO
; DC Characteristics/V
IL
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, V
WI
, I
CC3
and clock slew
rate. Descriptions of Polling, Hold Condition, Page Programming, Release for Deep Power-
down made more precise. Value of t
W
(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Stand-by Power mode from Deep Power-down mode,
and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current changed. Write Protect setup
and hold times specified, for applications that switch Write Protect to exit the Hardware
Protection mode immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added.
40MHz AC Characteristics table included as well as 25MHz. I
CC3
(max), t
SE
(typ) and t
BE
(typ)
values improved. Change of naming for VDFPN8 package
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for RoHS compliant
devices
05-Aug-2004
4.0
Device Grade information clarified. Data-retention measurement temperature corrected.
Details of how to find the date of marking added.
相關PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25SI | Thin Film, Rectangular, Fusible, Resistor Chips |
| M27256-F1 | NMOS 256K 32K x 8 UV EPROM |
| M27256-F6 | NMOS 256K 32K x 8 UV EPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40VMP6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMP6TG | 功能描述:閃存 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P40-VMP6TG/TS | 功能描述:IC FLASH 4MBIT 50MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25P40-VMP6TG/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMP6TGB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin VFQFPN EP T/R 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin VFQFPN EP T/R |
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