參數(shù)資料
型號(hào)： M14C32
廠商： 意法半導(dǎo)體
英文描述： Memory Micromodules General Information for D1, D2 and C Packaging
中文描述： 一般資料記憶體微型模塊包裝為D1，D2級(jí)和C
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 277K
代理商： M14C32
MICROMODULES
5/13
RELIABILITY
Product
monitoring is performed by ST. The principal steps
are listed in Table 8 and Table 9.
qualification
and
on-going
reliability
Table 8. Package Related Tests
Note: 1. The notation m/n means: reject the whole lot if more than m devices fail from a sample of n devices. For instance, 0/45 means a
sample of 45 devices taken from a lot, with the whole lot only accepted if every one of the 45 sample devices passed the test.
Table 9. Product Related Tests
Test
Description
Test
Description
Method
Condition
LPTD
Criteria
(note 1)
1
Geometry
ST Specification
Monitoring/Lot
5
0/45
2
Visual inspection
ST Specification
Outgoing/Lot
AQL= 0.040
0/315
3
Temperature cycling
MIL-STD-883
Method 1010
-40
°
C to 150
°
C, 100 cycles
5
0/45
4
Salt atmosphere
corrosion of contacts
MIL-STD-883
Method 1009
35
°
C, 5% NaCl, 24 hour
15
0/15
5
Moisture resistance
MIL-STD-883
Method 1004
85
°
C, 85% HR Biased 5.5 V,
168 hour
7
0/32
6
Vibration with electrical
measurement
ISO/IEC 10373
1 octave/minute, acceleration up to
10 G (repeated 20 times)
measurement memory check at 25
°
C
20
0/11
7
Bending properties
ISO/IEC 7816-1
Long side: deflection 2 cm
Short side: deflection 1 cm
30 bendings per minute
20
0/11
8
Torsion properties
ISO/IEC 7816-1
Maximum displacement 15
° ±
1
°
1000 torsions, 30 torsions per minute
applied on long side only
20
0/11
Method
Condition
LPTD
Criteria
1
Life test
MIL-STD-883
Method 1005
140
°
C, 6 V, 504 hours measurement
memory check at 25
°
C
3
0/76
2
Electrostatic discharge
MIL-STD-883
Method 3015
Human body model:
1.5 k
, 100 pF,
±
5000 V
n/a
0/9
Electrostatic discharge
MIL-STD-883
Method 3015
Machine model: 0
, 200 pF,
±
200 V
measurement memory check at 25
°
C
n/a
0/9
3
Data retention,
Temperature storage
MIL-STD-883
Method 1005
150
°
C, 1000 hours, no bias
measurement memory check at 25
°
C
5
0/45
4
Write/Erase cycles
ST Specification
100,000 Cycles
200 ppm/
1024 byte/
1000 cycle
0/32
5
Magnetic field, memory
check
ISO IEC 10373
79,500 A/m
15
1/25
6
X-rays, memory check
ISO IEC 10373
70 kV,0.1 Grey
15
1/25
7
UV light,memory check
ISO IEC 10373
15 W.s/cm
2
, 30 minutes maximum
15
1/25
相關(guān)PDF資料
PDF描述
M14C32DD TERMINAL BLOCK, 8WAY; Connector type:Terminal Block, Barrier; Material, contact:Copper alloy; Plating, contact:Bright Tin; Positions, No. of:8; Pitch:0.375"; Mounting type:PC Board; Wire size, AWG:12AWG; Approval Bodies:UL, CSA; RoHS Compliant: Yes
M14C64 Memory Card IC 64/32 Kbit Serial IC Bus EEPROM
M16C30P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
M2201 2-Wires 1 Kbit x8 Serial EEPROM
M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M14C32DD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:M14C32 Die Description
M14C64 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Memory Micromodules General Information for D1, D2 and C Packaging
M14D1G1664A-2.5BG2D 制造商:ESMT 功能描述:
M14D2561616A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-2.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks DDR II SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*