參數(shù)資料
型號(hào): M12S64322A-6BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝: 13 X 8 MM, LEAD FREE, BGA-90
文件頁數(shù): 43/46頁
文件大?。?/td> 746K
代理商: M12S64322A-6BG
ES MT
M12S64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision
:
1.0
43/46
Mode Register Set Cycle
Auto Refresh Cycle
All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note : 1. CS , RAS , CAS , &
WE
activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
DQ
DQ M
:Don't Car e
HIGH
0 1 2 3 4 5 6
0 1 2 3 4 5 6 7 8 9 10
HIGH
Key
Ra
HI- Z
HI- Z
*Not e 2
*N ot e 1
*N ot e 3
t
R C
M R S
New
Command
Auto Refresh
New Com m an d
相關(guān)PDF資料
PDF描述
M12S64322A-6TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M13S128168A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-5BG 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S64322A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
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