參數(shù)資料
型號(hào)： M12S64322A-6BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝： 13 X 8 MM, LEAD FREE, BGA-90
文件頁(yè)數(shù)： 25/46頁(yè)
文件大小： 746K
代理商： M12S64322A-6BG
ES MT
M12S64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision
:
1.0
25/46
12. About Burst Type Control
Sequential Counting
Interleave Counting
At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 1, 2, 4, 8 and full page.
Basic
MODE
At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting
Random
MODE
Random Column Access
t
CCD
= 1 CLK
Every cycle Read/Write Command with random column address can realize Random
Column Access.
That is similar to Extended Data Out (EDO) Operation of conventional DRAM.
13. About Burst Length Control
1
At MRS A210 = “000”
At auto precharge . tRAS should not be violated.
2
At MRS A210 = “001”
At auto precharge . tRAS should not be violated.
4
At MRS A210 = “010”
8
At MRS A210 = “011”
Basic
MODE
Full Page
At MRS A210 = “111”
At the end of the burst length , burst is warp-around.
t
BDL
= 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
Using burst stop command, any burst length control is possible.
Random
MODE
Burst Stop
RAS Interrupt
(Interrupted by
Precharge)
Before the end of burst. Row precharge command of the same bank stops read /write burst
with auto precharge.
t
RDL
= 1 with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
During read/write burst with auto precharge, RAS interrupt can not be issued.
Interrupt
MODE
CAS Interrupt
Before the end of burst, new read/write stops read/write burst and starts new read/write
burst.
During read/write burst with auto precharge, CAS interrupt can not be issued.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S64322A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
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