參數(shù)資料
型號(hào)： M12S128168A
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 200萬× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù)： 15/44頁(yè)
文件大小： 967K
代理商： M12S128168A
ES MT
Write command
(CS ,CAS ,
WE
= Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS ,CAS = Low, RAS ,
WE
= High)
Read data is available afterCAS latency requirements have been met.
This command sets the burst start address given by the column address.
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
15/44
CBR (auto) refresh command
( CS , RAS , CAS = Low,
WE
,
CKE = High)
This command is a request to
begin the CBR refresh operation. The
refresh address is generated internally.
Before executing CBR refresh, all
banks must be precharged.
After this cycle, all banks will be in
the idle (precharged) state and ready
for a row activate command.
During t
RC
period (from refresh
command
to
refresh
command), the M12L128168A cannot
accept any other command.
or
activate
相關(guān)PDF資料
PDF描述
M12S128168A-10TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12S16161A-7BG 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
M12S64322A 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-6BG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S128168A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
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