參數(shù)資料
型號(hào): LX5512ELQ
英文描述: 8-Digit LED driver, 7-Segment, -40°C to +85°C, SOIC 24-pin
中文描述: 無線局域網(wǎng)功率放大器
文件頁數(shù): 3/7頁
文件大?。?/td> 296K
代理商: LX5512ELQ
LX5512E
P
RELIMINARY
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
W
M
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C
InGaP HBT 2.4-2.5GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2002
Rev. 1.0, 2003-01-10
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Vref = 2.9V, Icq = 50mA, T
A
= 25°C
LX5512E
Typ
33
2.0
120
50
1.6
32
±0.75
TBD
8
-50
-40
-40
210
-54
TBD
1.4
Parameter
Symbol
Test Conditions / Comment
Min
2.4
10
Max
2.5
Units
Frequency Range
Power Gain at Pout = 18dBm
EVM at Pout = 18dBm
Total Current at Pout = 18dBm
Quiescent Current
Bias Control Reference Current
Small – Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout = 23dBm
2
nd
side lobe at 23dBm
Ramp-On Time
Differential Detector Response
f
64QAM / 54Mbps
64QAM / 54Mbps
For Icq = 50mA
Over 100MHz
-40 to +85°C
Pout = 18dBm
Pout = 18dBm
11Mbps CCK
11Mbps CCK
10 ~ 90%
18dBm OFDM
GHz
Gp
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Ic_total
Icq
Iref
S21
S21
S21
S11
S22
S12
t
ON
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
L
E
C
T
R
I
C
A
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