參數(shù)資料
型號(hào): LX5512ELQ
英文描述: 8-Digit LED driver, 7-Segment, -40°C to +85°C, SOIC 24-pin
中文描述: 無線局域網(wǎng)功率放大器
文件頁數(shù): 1/7頁
文件大?。?/td> 296K
代理商: LX5512ELQ
LX5512E
P
RELIMINARY
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
W
M
.
C
InGaP HBT 2.4-2.5GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2002
Rev. 1.0, 2003-01-10
DESCRIPTION
The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic
microwave
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction
Bipolar
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 33 dB power gain
between
2.4-2.5GHz,
quiescent
current
integrated
Transistor
at
a
low
mA.
of
50
For 18dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
2 %, and consumes 120 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for broadband, high-gain power
amplifier
requirements
802.11b/g applications.
for
IEEE
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~ 33 dB at
2.45GHz & Pout=18dBm
Total Current 120 mA for
Pout=18 dBm at 2.45 GHz
OFDM
EVM ~2 % for 64QAM/ 54Mbps
& Pout=18dBm
Small Footprint: 3x3mm
2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-N11 Wireless
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
T
J
(
°
C)
LQ
Plastic MLPQ
16-Pin
LX5512E-LQ
0 to 70
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5512E-LQT)
L
X
5
5
1
2
E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LX5512E-LQ 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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