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參數(shù)資料
| 型號： | LX5512E |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| 中文描述： | 的InGaP HBT 2.4 - 2.5 GHz功率放大器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 230K |
| 代理商： | LX5512E |
LX5512E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright
2000
Rev. 1.2, 2004-01-16
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0
°
C
≤
T
A
≤
70
°
C except where
otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, T
A
= 25°C
LX5512E
Typ
34
3.0
130
50
1.6
34
1.5
1.5
8
10
-50
-40
-40
200
-50
1.5
Parameter
Symbol
Test Conditions
Min
2.4
Max
2.5
100
Units
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
2
nd
side lobe at 23 dBm
Ramp-On Time
Differential Detector response
f
64GQAM / 54Mbps
For Icq = 50mA
Over 100MHz
0°C to +70°C
Pout = 19dBm
Pout = 19dbm
11 Mbps CCK
11 Mbps CCK
10 ~ 90%
19 dBm OFDM, 100kOhm’s
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Gp
Ic_total
Icq
Iref
S21
S21
S21
S11
S22
S12
t
ON
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
L
E
C
T
R
I
C
A
L
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