參數(shù)資料
型號(hào)： LX5530LQ
廠商： MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類： 衰減器
英文描述： InGaP HBT 4.5 ? 6.0GHz Power Amplifier
中文描述： 4500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： ROHS COMPLIANT, PLASTIC, MLPQ, 12 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 99K
代理商： LX5530LQ
LX5530
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2000
Rev. 1.0a, 2006-09-12
W
M
.
C
InGaP HBT 4.5 – 6.0GHz Power Amplifier
TM
D E S C R I P T I O N
The LX5530 is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9 – 5.9
GHz frequency range. The PA is
implemented as a three-stage monolithic
microwave integrated circuit (MMIC)
with active bias, on-chip input
matching and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
(MOCVD). It operates with a single
positive voltage supply of 3 – 5V,
with high power gain of up to 33dB.
When operated at 5V supply voltage,
it provides up to +25dBm linear
output power for 802.11a OFDM
spectrum mask compliance, and low
EVM of 3% for up to +23dBm output
power in the 4.9-5.9GHz band.
IC
process
The LX5530 also features an on-chip
power detector at the output port of the
PA to help reduce BOM cost and PCB
space for implementation of power
control in a typical wireless system. The
power detector is integrated with a
temperature-compensated bias network
and provides very stable response
across a wide range of output power
levels, over temperature extremes from
-40 to +85°C.
The LX5530 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability makes the
LX5530
an
ideal
broadband, high-gain power amplifier
requirements for IEEE 802.11a, and
Hiperlan2 portable WLAN, as well as
the
emerging
802.16
applications.
solution
for
WiMAX
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
B L O C K D I A G R A M
Vc
K E Y F E A T U R E S
Broadband 4.9 – 5.9GHz
Operation
Advanced InGaP HBT
Single-Polarity 3 – 5V Supply
Power Gain up to ~ 33dB for
V
C
=5V, Icq = 250mA
Power Gain > ~28dB across 4.9-
5.85GHz
OFDM Mask Compliance Power
Pout ~ +25dBm over 4.9-
5.85GHz (ACPR ~ -50dBc @
±30MHz Offset)
Pout up to +23dBm with EVM
~3% (V
C
= 5V)
EVM < ~2.5% for
Pout=+21dBm across 4.9-
5.85GHz (V
C
= 5V)
EVM < ~2.5% for
Pout=+19dBm across 4.9-
5.85GHz (V
C
= 4V)
Total Current ~250mA for Pout =
+20dBm, Duty Cycle = 99%
(V
C
= 4V)
Complete On-Chip Input Match
Simple Output Match for Optimal
Broadband EVM
On-Chip RF Decoupling
Temperature-Compensated On-
Chip Output Power Detector
with Wide Dynamic Range
Small Footprint: 3x3mm
Low Profile: 0.9mm
A P P L I C A T I O N S
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
IEEE 802.16 WiMAX
3 X 3 M M M L P P A C K A G E
P A C K A G E O R D E R I N F O
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free
LX5530LQ
MSC
5530
608Y
LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5530LQ-TR)
L
X
5
5
3
0
Active Bias Network
Vref
Input
Output
Det
RF
RF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LX5530LQ-TR 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.9GHz 5V 16-Pin MLPQ EP T/R 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.9GHZ 5V - Tape and Reel 制造商:Microsemi Corporation 功能描述:LX5530LQ Series 4.9 to 5.9 GHz 3 to 5 V Surface Mount Power Amplifier - MLPQ-16
LX5535 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5535LQ 制造商:Microsemi Corporation 功能描述:WIRELESS LAN POWER AMPLIFIER - Bulk
LX5535LQ-TR 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 2.5GHz 5V 16-Pin MLPQ EP T/R
LX5537 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.3 - 2.7 GHz Power Amplifier
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