參數(shù)資料
型號(hào): LX5512E-LQ
廠商: MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類: 衰減器
英文描述: InGaP HBT 2.4 - 2.5 GHz Power Amplifier
中文描述: 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 230K
代理商: LX5512E-LQ
LX5512E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Copyright
2000
Rev. 1.2, 2004-01-16
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
CHARACTERISTIC CURVES
m1
freq=2.400GHz
dB(S(2,1))=35.376
m7
freq=2.500GHz
dB(S(2,1))=33.462
2.2
2.4
2.6
2.8
2.0
3.0
-40
-50
-30
-20
-10
0
10
20
30
40
50
freq, GHz
d
d
m1m7
d
d
Figure 1 –
S-Parameter
(VC = 3.3V, VREF = 2.9V, Icq = 50mA)
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
E
2.4 GHz
2.45 GHz
2.5 GHz
Figure 2 –
EVM with 54Mb/s 64 QAM OFDM
(Vc = 3.3V, Vref = 2.9V, Icq = 50mA)
G
R
A
P
H
S
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