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參數(shù)資料
| 型號： | LX5512E-LQ |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 衰減器 |
| 英文描述： | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 230K |
| 代理商： | LX5512E-LQ |
LX5512E
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2000
Rev. 1.2, 2004-01-16
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power.............................................................................................5dBm
Operation Ambient Temperature...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
THERMAL DATA
LQ
Plastic MLPQ 16-Pin
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
θ
JC
THERMAL RESISTANCE
-
JUNCTION TO
A
MBIENT
,
θ
JA
10
°
C/W
50
°
C/W
PACKAGE PIN OUT
RF IN
VB1
RF IN
V
V
V
RF OUT
DET PWR
RF OUT
V
VC3
*
1
2
3
4
5
6
7
8
9
1
0
11
12
1
3
14 15 16
* Pad is Ground
D
V
GND
G
G
LQ
P
ACKAGE
(Bottom View)
FUNCTIONAL PIN DESCRIPTION
Name
Description
RF IN
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the
first stage.
VB1
Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage
VB3
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor
bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10
nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting
in a single supply voltage (referred to as Vc).
VCC
RF OUT
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage..
VC1
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor,
followed by a 10 Ohm resistor
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass
capacitor, followed by a 5 Ohm resistor
Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass
capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as Vc
VC2
VC3
DET_REF
Power detector reference output pin should be terminated with a 100 kOhm loading resistor
DET_PWR
Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the
power amplifier..
P
A
C
K
A
G
E
D
A
T
A
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