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參數(shù)資料
| 型號(hào)： | LX5512BLQ |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MLPQ-16 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | LX5512BLQ |
LX5512B
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2004
Rev. 1.0, 2004-06-23
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
A B S O L U T E M A X I M U M R A T I N G S
DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation.........................................................................................................2W
RF Input Power..................................................................................................................5dBm
Operation Ambient Temperature ............................................................................-40 to +85
C
Storage Temperature............................................................................................-60 to +150
o
C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
T H E R M A L D A T A
LQ
Plastic MLPQ 16-Pin
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
θ
JC
THERMAL RESISTANCE
-
JUNCTION TO
A
MBIENT
,
θ
JA
10
°
C/W
50
°
C/W
Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
The
θ
JA
numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
P A C K A G E P I N O U T
N
e
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VC3
RF OUT
RF OUT
DET
R
LQ
P
ACKAGE
(Bottom View)
V
V
V
N/C
RF IN
N/C
N/C
V
N
V
Pb-free 100% Matte Tin Lead Finish
F U N C T I O N A L P I N D E S C R I P T I O N
Name
Description
RF IN
RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be
needed.
Bias current control voltage for the first and second stage.
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB12) into a single reference voltage (referred to as V
REF
) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF
bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a
single supply voltage (referred to as V
C
).
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,
followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single
supply voltage (referred to as V
C
).
Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.
This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as V
C
).
Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass
capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as V
C
).
Power detector reference output pin should be terminated with a
VB12
VB3
VCC
RF OUT
VC1
VC2
VC3
REF
100K
loading resistor
DET
Power detector output pin should be terminated with a
100K
loading resistor
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
P
A
C
K
A
G
E
D
A
T
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5512BLQ-TR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512E | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512E_05 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512ELQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 2.5GHZ 16MLPQ - Bulk |
| LX5512E-LQ | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
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