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參數(shù)資料
| 型號(hào)： | LX5512BLQ |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 衰減器 |
| 英文描述： | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MLPQ-16 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | LX5512BLQ |
LX5512B
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2004
Rev. 1.0, 2004-06-23
W
M
.
C
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
D E S C R I P T I O N
The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a three-
stage
monolithic
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
microwave
IC
process
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current I
CQ
~65mA
Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
Small Footprint: 3x3mm2
Low Profile: 0.9mm
A P P L I C A T I O N S
IEEE 802.11b/g
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
Plastic MLPQ
16 pin
LX5512BLQ
LQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
L
X
5
5
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LX5512B | InGaP HBT 2.4 ? 2.5 GHz Power Amplifier |
| LX5512E | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| LX5512E-LQ | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| LX5530 | InGaP HBT 4.5 ? 6.0GHz Power Amplifier |
| LX5530LQ | InGaP HBT 4.5 ? 6.0GHz Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5512BLQ-TR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512E | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512E_05 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 – 2.5 GHz Power Amplifier |
| LX5512ELQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 2.5GHZ 16MLPQ - Bulk |
| LX5512E-LQ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
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