
LX5506B
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
Copyright
2003
Rev. 1.0b, 2005-03-02
TM
A B S O L U T E M A X I M U M R A T I N G S
DC Supply Voltage, RF Off...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power...........................................................................................15dBm
Thermal Resistance (Junction-to-Case,
θ
JC
).................................................6°C/W
Maximum Junction Temperature (T
J
max) .................................................. 150°C
Operation Ambient Temperature.......................................................-40 to +85°C
Storage Temperature..........................................................................-65 to 150°C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure).260
°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
P A C K A G E P I N O U T
LQ
P
ACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
F U N C T I O N A L P I N D E S C R I P T I O N
Name
Pin #
Description
RF IN
2, 3
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
VCC
4
Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and
VC3 pins, resulting in a single supply voltage (referred to as Vc).
Bias control voltage for the first stage.
Bias control voltage for the second stage.
Bias control voltage for the third stage.
VB1
VB2
VB3
5
6
7
DET
9
Detector output for the third stage PA output power.
RF OUT
10, 11
RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage.
DC supply voltage for the first stage amplifier.
DC supply voltage for the second stage amplifier.
DC supply voltage for the third stage amplifier.
The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the
power amplifier.
VC1
VC2
VC3
16
15
14
GND
Center
Metal
NC
1, 8,
12,13
These pins are unused and not connected to the device inside the package. They can be treated either
as open (floating) pins, or connected to ground metal.
P
A
C
K
A
G
E
D
A
T
A