- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376115 > LX5503-LQ (MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP) InGaP HBT 5-6GHz Power Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | LX5503-LQ |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 衰減器 |
| 英文描述： | InGaP HBT 5-6GHz Power Amplifier |
| 中文描述： | 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, PLASTIC, MLPQ-16 |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 473K |
| 代理商： | LX5503-LQ |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
LX5503
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
W
M
.
C
InGaP HBT 5-6GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2000
Rev. 1.1, 9/16/2002
A B S O L U T E M A X I M U M R A T I N G S
DC Supply Voltage, RF off................................................................................6V
Collector Current.........................................................................................500mA
Total Power Dissipation...................................................................................3 W
RF Input Power...........................................................................................10dBm
Operation Ambient Temperature .......................................................-40 to +85
o
C
Storage Temperature........................................................................-60 to +150
o
C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
P A C K A G E P I N O U T
1
4
5
9
10
11
2
3
6
7
8
12
13
14
15 16
LQ P
ACKAGE
(Bottom View)
F U N C T I O N A L P I N D E S C R I P T I O N
Pin Name
Pin Number
Description
RF IN
2, 3
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor
base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50
.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage. The VB2 pin can be connected with the first
stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an
external resistor bridge(R1/R2).
Supply voltage for the bias reference and control circuits. The VCC feed line should be
terminated with a 1
μ
F bypass capacitor as close to the device as possible. This pin can be
combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc).
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1
μ
F bypass capacitor at the
supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1
μ
F bypass capacitor at the
supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
The center metal base of the MLP package provides both DC and RF ground as well as heat
sink for the power amplifier.
Vb1
6
Vb2
7
Vcc
9
RF OUT
10, 11
Vc1
15
Vc2
14
GND
P
A
C
K
A
G
E
D
A
T
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LX5506 | InGaP HBT 4.5 - 6GHz Power Amplifier |
| LX5511 | InGaP HBT 2.3 - 2.5 GHz Power Amplifier |
| LX5511LQ | InGaP HBT 2.3 - 2.5 GHz Power Amplifier |
| LX5540 | Co-Package 2.3 - 2.5 GHz HBT Power Amplifier & pHEMT Low Noise Amplifier |
| LX6431BILP | PRECISION PROGRAMMABLE REFERENCES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5503LQ-TR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 5-6GHz Power Amplifier |
| LX5506 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 - 6GHz Power Amplifier |
| LX5506B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 6GHz Power Amplifier |
| LX5506BLQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506BLQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Tape and Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。