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參數(shù)資料
| 型號： | LV065MU |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 64兆位（8米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 61/62頁 |
| 文件大?。?/td> | 778K |
| 代理商： | LV065MU |
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September 12, 2006
Am29LV065MU
59
D A T A S H E E T
REVISION SUMMARY
Revision A (August 3, 2001)
Initial release as abbreviated Advance Information
data sheet.
Revision A+1 (October 3, 2001)
Global
Added 120 ns device, changed 100 ns, V
IO
= 1.65–2.7
V device to 110 ns, changed 90 ns operating range to
3.0–3.6 V.
Physical Dimensions
Added section.
Revision B (April 26, 2002)
Expanded data sheet to full specification version.
Revision B+1 (August 9, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added t
RH
parameter to table.
Erase and Program Operations
Added t
BUSY
parameter to table.
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
μ
μ
s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μ
s to 5
μ
s and added a maxi-
mum of 20
μ
s.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the I
ACC
specification row.
CFI
Changed text in the third paragraph of CFI to read
“reading array data.”
Revision B+2 (September 10, 2002)
Product Selector Guide
Added Note 2.
Ordering Information
Added Note 1.
Sector Erase Command Sequence
Deleted statement that describes the outcome of
when the Embedded Erase operation is in progress.
Revision B+3 (November 7, 2002)
Product Selector Guide and Read Only Operations
Changed the page access times and T
OE
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted
that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.”
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address.
Revision B+4 (February 17, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Removed 90R speed option.
Added note 2.
Ordering Information
Corrected Valid Combination to reflect speed option
changes.
Added Note.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LV640MB | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MH | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640ML | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MT | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MU | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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