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| 型號(hào)： | LV065MU |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 64兆位（8米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門(mén)閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 3/62頁(yè) |
| 文件大?。?/td> | 778K |
| 代理商： | LV065MU |
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25262
Issue Date:
September 12, 2006
Rev:
C
Amendment/
4
Refer to AMD’s Website (www.amd.com) for the latest information.
DATA SHEET
Am29LV065MU
64 Megabit (8 M x 8-Bit) MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
control
— Device generates and tolerates data voltages on CE#
and DQ inputs/outputs as determined by the voltage
on the V
IO
pin; operates from 1.65 to 3.6 V
Manufactured on 0.23 μm MirrorBit process
technology
SecSi
(Secured Silicon) Sector region
— 256-byte sector for permanent, secure identification
through an 16-byte random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 64 Kbyte sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 11 μs typical effective write buffer byte programming
time: 32-byte write buffer reduces overall
programming time for multiple-byte updates
— 8-byte read page buffer
— 32-byte write buffer
Low power consumption (typical values at 3.0 V,
5 MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 48-pin TSOP
— 63-ball FBGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— ACC (high voltage) pin accelerates programming
time for higher throughput during system production
— Hardware reset pin (RESET#) resets device
— Ready/Busy# pin (RY/BY#) detects program or erase
cycle completion
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV065MU and is the factory-recom-
mended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference
and historical purposes only.
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| LV640MB | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MH | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640ML | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MT | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| LV640MU | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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|---|---|
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