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參數(shù)資料
| 型號： | LT1162 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| 中文描述： | Half-/Full-Bridge N溝道功率MOSFET驅動器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 347K |
| 代理商： | LT1162 |
1
LT1160/LT1162
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
I
Floating Top Driver Switches Up to 60V
I
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
I
180ns Transition Times Driving 10,000pF
I
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
I
Top Drive Protection at High Duty Cycles
I
TTL/CMOS Input Levels
I
Undervoltage Lockout with Hysteresis
I
Operates at Supply Voltages from 10V to 15V
I
Separate Top and Bottom Drive Pins
The LT
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
FEATURES
DESCRIPTIO
N
U
I
PWM of High Current Inductive Loads
I
Half-Bridge and Full-Bridge Motor Control
I
Synchronous Step-Down Switching Regulators
I
3-Phase Brushless Motor Drive
I
High Current Transducer Drivers
I
Class D Power Amplifiers
APPLICATIO
S
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
N
U
+
+
+
SV
+
PV
+
UV OUT
IN TOP
IN BOTTOM
14
13
12
11
9
8
1
10
4
2
3
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
1N4148
HV = 60V MAX
C
BOOST
1
μ
F
10
μ
F
25V
12V
PWM
0Hz TO 100kHz
1160 TA01
IRFZ44
IRFZ44
5
6
1000
μ
F
100V
SGND
PGND
IN TOPIN BOTTOMT GATE DRB GATE DR
L
L
L
H
H
L
H
H
L
L
H
L
L
H
L
L
相關PDF資料 |
PDF描述 |
|---|---|
| LT1162CN | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162CSW | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162IN | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162ISW | Dual 1-of-4 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 |
| LT1160CS | TRANS PNP LF 400VCEO .1A TO-126 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LT1162CN | 功能描述:IC PWR MOSFET DRIVER N-CH 24-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| LT1162CN#PBF | 功能描述:IC PWR MOSFET DRIVER NCH 24-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| LT1162CSW | 功能描述:IC PWR MOSFET DRIVER N-CH 24SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1162CSW#PBF | 功能描述:IC PWR MOSFET DRIVER NCH 24SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1162CSW#TR | 功能描述:IC DRIVER MOSF N-CH DUAL 24SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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