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參數(shù)資料
| 型號： | LT1158I |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver |
| 中文描述： | 半橋N溝道功率MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 426K |
| 代理商： | LT1158I |
LT1158
10
Figure 3. Adding Synchronous Switching to a Step-Down Switching Regulator
Ugly Transient Issues
In PWM applications the drain current of the top MOSFET
is a square wave at the input frequency and duty cycle. To
prevent large voltage transients at the top drain, a low ESR
electrolytic capacitor must be used and returned to the
power ground. The capacitor is generally in the range of
250
μ
F to 5000
μ
F and must be physically sized for the
RMS current flowing in the drain to prevent heating and
premature failure. In addition, the LT1158 requires a
separate 10
μ
F capacitor connected closely between pins
2 and 7.
The LT1158 top source and sense pins are internally
protected against transients below ground and above
supply. However, the gate drive pins cannot be forced
below ground. In most applications, negative transients
coupled from the source to the gate of the top MOSFET do
not cause any problems. However, in some high current
(10A and above) motor control applications, negative
transients on the top gate drive may cause early tripping
of the current limit. A small Schottky diode (BAT85) from
pin 15 to ground avoids this problem.
Switching Regulator Applications
The LT1158 is ideal as a synchronous switch driver to
improve the efficiency of step-down (buck) switching
regulators. Most step-down regulators use a high current
Schottky diode to conduct the inductor current when the
switch is off. The fractions of the oscillator period that the
switch is on (switch conducting) and off (diode conduct-
ing) are given by:
SWITCH “ON”=
V
V
V
TOTAL PERIOD
SWITCH “OFF”=
V
V
TOTAL PERIOD
OUT
IN
IN
OUT
IN
×
×
Note that for V
IN
> 2V
OUT
, the switch is off longer than it is
on, making the diode losses more significant than the
switch. The worst case for the diode is during a short
circuit, when V
OUT
approaches zero and the diode con-
ducts the short-circuit current almost continuosly.
Figure 3 shows the LT1158 used to synchronously drive a
pair of power MOSFETs in a step-down regulator applica-
tion, where the top MOSFET is the switch and the bottom
MOSFET replaces the Schottky diode. Since both conduc-
tion paths have low losses, this approach can result in very
high efficiency––from 90% to 95% in most applications.
And for regulators under 5A, using low R
DS(ON)
N-channel
MOSFETs eliminates the need for heatsinks.
V
OUT
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
B GATE DR
B GATE FB
FAULT
INPUT
LT1158
+
REF
PWM
R
SENSE
R
GS
+
V
IN
1158 F03
APPLICATIO
S I
FOR
ATIO
U
W
U
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1158IS | Half Bridge N-Channel Power MOSFET Driver |
| LT1160CN | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162 | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162CN | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1162CSW | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158IN | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158IN#PBF | 功能描述:IC MOSFET DVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158IS | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158ISW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158ISW#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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