參數(shù)資料
型號(hào): LSL9R30120G2
廠商: Fairchild Semiconductor Corporation
英文描述: ISL9R30120G2
中文描述: ISL9R30120G2
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 143K
代理商: LSL9R30120G2
2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
I
Figure 12. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θ
J
,
N
T
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
1.0
Test Circuit and Waveforms
Figure 13. t
rr
Test Circuit
Figure 14. t
rr
Waveforms and Definitions
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
V
DD
L
R
R < 0.1
V
DD
= 50V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
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