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參數資料
| 型號： | LSL9R30120G2 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | ISL9R30120G2 |
| 中文描述： | ISL9R30120G2 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 143K |
| 代理商： | LSL9R30120G2 |
2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
I
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-247
Device Marking
R30120G2
Device
Package
TO-247
Tape Width
N/A
Quantity
30
ISL9R30120G2
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 1200V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1.0
μA
mA
I
F
= 30A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.8
2.6
3.3
3.1
V
V
V
R
= 10V, I
F
= 0A
-
115
-
pF
I
F
= 1A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 30A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 30A,
dI
F
/dt = 200A/μs,
V
R
= 780V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
80
269
7.5
930
529
6.2
11
3.0
260
4.8
30
3.4
520
56
100
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
μC
ns
-
A
μC
A/μs
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
I
F
= 30A,
dI
F
/dt = 200A/μs,
V
R
= 780V,
T
C
= 125
°
C
I
F
= 30A,
dI
F
/dt = 1000A/μs,
V
R
= 780V,
T
C
= 125
°
C
TO-247
-
-
-
-
0.75
30
°
C/W
°
C/W
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