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參數(shù)資料
| 型號(hào)： | LSL9R30120G2 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | ISL9R30120G2 |
| 中文描述： | ISL9R30120G2 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 143K |
| 代理商： | LSL9R30120G2 |
2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
I
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. Maximum Reverse Recovery Current
and t
rr
vs Case
Temperature
Figure 11.
DC CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
S
3
4
5
6
7
8
9
200
400
600
800
1000
1200
V
R
= 780V, T
C
= 125
o
C
I
F
= 15A
I
F
= 30A
I
F
= 60A
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.6
200
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
Q
R
,
V
R
= 780V, T
C
= 125
o
C
6.0
I
F
= 15A
I
F
= 30A
I
F
= 60A
V
R
, REVERSE VOLTAGE (V)
C
J
,
0
200
400
600
800
1000
1200
0.1
1
10
100
0.03
1400
1600
f = 1MH
Z
t
-22
-20
-18
-16
-14
25
50
75
100
125
150
200
250
300
350
400
I
F
= 30A, V
R
= 780V, dI
F
/dt = 500A/μs
T
C
, CASE TEMPERATURE (
o
C)
I
R
,
I
RM(REC)
t
RR
5
0
100
110
130
80
150
120
10
15
20
T
C
, CASE TEMPERATURE (
o
C)
I
F
,
140
90
70
60
35
30
25
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