參數(shù)資料
型號(hào): LS318
廠商: Linear Integrated Systems
英文描述: LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS
中文描述: 日志一致性整體式雙NPN晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 29K
代理商: LS318
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
MATCHING CHARACTERISTICS
@ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|V
BE1
-V
BE2
|
LS318 UNITS
0.4
1
1
CONDITIONS
I
C
= 10
μ
A
Base Emitter Voltage Differential
TYP.
MAX.
TYP.
mV
mV
μ
V/
°
C
V
CE
= 5V
|(V
BE1
-V
BE2
)|/
°
C
Base Emitter Voltage Differential
I
C
= 10
μ
A
T
A
= -55
°
C to +125
°
C
I
C
= 10
μ
A
I
C
= 10
μ
A
T
A
= -55
°
C to +125
°
C
I
C
= 10
μ
A
V
CE
= 5V
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
5
10
0.5
MAX.
MAX.
MAX.
|I
B1
- I
B2
|
|
(I
B1
-I
B2
)|/
°
C
nA
nA/
°
C
V
CE
= 5V
V
CE
= 5V
h
FE1
/h
FE2
5
TYP.
%
V
CE
= 5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
μ
A.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
DIM. A
0.165
0.185
0.040
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
34
5
6
7
8
0.029
0.045
SEATING
PLANE
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
P-DIP
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
(10.29)
MAX.
(4.78)
(5.00)
相關(guān)PDF資料
PDF描述
LS320 MLX PLUG 15CKT WHITE 94V0 4202115CWHT
LS3250 MONOLITHIC DUAL NPN TRANSISTORS
LS3250A MONOLITHIC DUAL NPN TRANSISTORS
LS3250B MONOLITHIC DUAL NPN TRANSISTORS
LS3250C MONOLITHIC DUAL NPN TRANSISTORS
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