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參數(shù)資料
| 型號(hào)： | LS3250C |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | MONOLITHIC DUAL NPN TRANSISTORS |
| 中文描述： | 2 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | LS3250C |
FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING
1
EXCELLENT THERMAL TRACKING
1
ABSOLUTE MAXIMUM RATINGS
2
@ 25 °C (unless otherwise stated)
2mV
3μV/°C
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
TBD
50mA
80V
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3250A
MIN MAX
LS3250B
MIN MAX
LS3250C
MIN MAX
SYMBOL
CHARACTERISTIC
UNIT
CONDITIONS
BE2
BE1
V
V
Base to Emitter Voltage Differential
2
5
10
mV
I
C
= 10mA, V
CE
= 5V
T
V
V
BE2
BE1
Base to Emitter Voltage Differential
Change with Temperature
3
5
15
μV/°C
I
C
= 10mA, V
CE
= 5V
T
A
= -40°C to +85°C
B2
B1
I
I
Base Current Differential
10
10
10
nA
I
C
= 10μA, V
CE
= 5V
T
I
I
B2
B1
Base Current Differential
Change with Temperature
0.5
0.5
1.0
nA/°C
I
C
= 10μA, V
CE
= 5V
T
A
= -40°C to +85°C
FE2
FE1
h
h
Current Gain Differential
10
10
15
%
I
C
= 10μA, V
CE
= 5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3250A
MIN MAX
LS3250B
MIN MAX
LS3250C
MIN MAX
SYMBOL
CHARACTERISTIC
UNIT
CONDITIONS
BV
CBO
BV
CEO
Collector to Base Breakdown Voltage
45
40
20
I
C
= 10mA, I
E
= 0A
Collector to Emitter Breakdown Voltage
Collector to Collector Breakdown
Voltage
Emitter to Base Breakdown Voltage
3
45
40
20
BV
CCO
80
80
80
I
C
= 10μA, I
E
= 0A
BV
EBO
V
CE(SAT)
6.2
6.2
6.2
I
E
= 10μA, I
C
= 0A
I
C
= 100mA, I
B
= 10mA
Collector to Emitter Saturation Voltage
0.25
0.25
1.2
V
LS3250 SERIES
MONOLITHIC DUAL
NPN TRANSISTORS
Linear Integrated Systems
1
2
3
4
8
7
6
5
PDIP
C1
B1
E1
NC
C2
B2
E2
NC
NC
1
2
3
4
8
7
6
5
SOIC
C1
B1
E1
C2
B2
E2
NC
5
BOTTOM VIEW
TO-71
1
2
3
6
7
B1
E1
C1
E2
B2
C2
E1
C1
E2
C2
5
BOTTOM VIEW
TO-78
1
2
3
6
7
B1
B2
1
3
2
SOT-23
TOP VIEW
6
4
5
C1
E1
C2
B1
E2
B2
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
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PDF描述 |
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| LS3316-150-RM | 10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L SOIC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS3250C_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS3250C_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| LS3250C_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS3250C_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
| LS3250C_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR |
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