
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
C1
3
5
BOTTOM VIEW
2
6
FEATURES
LOG CONFORMANCE
re =1
TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
I
C
Collector Current
10mA
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
-65
°
C to +200
°
C
+150
°
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C2
B1
B2
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
re
Log Conformance
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
LS318 UNITS
1.5
25
25
6.2
45
150
600
150
600
150
0.25
0.2
0.2
2
2
0.5
200
3
CONDITIONS
I
C
= 10-100-1000
μ
A
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 10
μ
A
I
C
= 10
μ
A
I
C
= 10
μ
A
MAX.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
V
V
V
V
CE
= 5V
Collector-Base Breakdown Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
h
FE
DC Current Gain
I
C
= 100
μ
A
V
CE
= 5V
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
I
C
= 1mA
I
C
= 1mAI
B
= 0.1 mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±
45V
I
C
= 1mA
I
C
= 100
μ
A
BW = 200Hz
f=1KHz
V
CE
= 5V
V
nA
nA
pF
pF
nA
MHz
dB
V
CB
= 20V
V
EB
= 3V
V
CB
= 3V
V
CE
= 5V
V
CE
= 5V
R
G
= 10 K
LOG CONFORMANCE
MONOLITHIC DUAL
NPN
TRANSISTORS
LS318