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參數(shù)資料
| 型號(hào)： | LRS1828 |
| 英文描述： | Flash ROM |
| 中文描述： | 閃存ROM |
| 文件頁數(shù)： | 30/45頁 |
| 文件大?。?/td> | 1382K |
| 代理商： | LRS1828 |
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LRS1806A
28
13.3 Write Cycle
(1,2,3,4,5,6,7,8)
(T
A
= -30°C to +85°C, S-V
CC
= 2.7V to 3.1V)
Notes
Min.
Notes:
1. Writing data into lower byte (S-WE controlled)
1) Data can be written by adding Low pulse into S-WE when the address is set while holding S-CE
1
= Low,
S-CE
2
= High, S-LB = Low and S-UB = High.
2) The data on lower byte are latched up into the memory cell during S-WE = Low and S-LB = Low.
2. Witing data into lower byte (S-LB controlled)
1) Data can be written by adding Low pulse into S-LB when the address is set while holding S-CE
1
= Low,
S-CE
2
= High, S-UB = High and S-WE = Low.
2) The data on lower byte are latched up into memory cell during S-WE = Low and S-LB = Low.
3. Writing data into upper byte (S-WE controlled)
1) Data can be written by adding Low pulse into S-WE when the address is set while holding S-CE
1
= Low,
S-CE
2
= High, S-LB = High and S-UB = Low.
2) The data on upper byte are latched up into the memory cell during S-WE = Low and S-UB = Low.
4. Writing data into upper byte (S-UB controlled)
1) Data can be written by adding Low pulse S-UB when the address is set while holding S-CE
1
= Low,
S-CE
2
= High, S-LB = High and S-WE = Low.
2) The data on upper byte are latched up into the memory cell during S-WE = Low and S-UB = Low.
5. Writing data into both byte (S-WE controlled)
1) Data can be written by adding Low pulse into S-WE when the address is set while holding S-CE
1
= Low,
S-CE
2
= High, S-LB = Low and S-UB = Low.
2) The data are latched up into the memory cell during S-WE = Low, S-LB = Low and S-UB = Low.
6. Writing data into both byte (S-LB, S-UB controlled)
1) Data can be written by adding Low pulse into S-LB and S-UB when the address is set while holding S-CE
1
= Low,
S-CE
2
= High and S-WE = Low.
2) The data are latched up into the memory cell during S-WE = Low, S-LB = Low and S-UB = Low
7. Read or write with using both S-LB and S-UB, the timing edge of S-LB and S-UB must be same.
8. While DQ pins are in the output state, the data that is opposite to the output data should not be given.
Symbol
Parameter
Max.
Unit
t
WC
t
CW
t
ASC
t
AHC
t
C1H
t
AW
t
AS
t
WP
t
BW
t
WR
t
DW
t
DH
t
OW
t
WHZ
Write Cycle Time
85
32,000
ns
Chip Enable to End of Write
70
ns
Address Setup to S-CE
1
Low
Address Hold to S-CE
1
High
S-CE
1
High Pulse Width
0
ns
0
ns
30
ns
Address Valid to End of Write
70
ns
Address Setup Time
0
ns
Write Pulse Width
40
ns
Byte Select Time
70
ns
Write Recovery Time
0
ns
Input Data Setup Time
35
ns
Input Data Hold Time
0
ns
S-WE High to Output Active
5
ns
S-WE Low to Output in High-Z
30
ns
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| LRS-200-12 | 功能描述:O/P +12V17A 制造商:mean well usa inc. 系列:LRS-200 零件狀態(tài):在售 類型:封閉式 輸出數(shù):1 電壓 - 輸入:90 ~ 132 VAC，180 ~ 264 VAC，240 ~ 370 VDC 電壓 - 輸出 1:12V 電壓 - 輸出 2:- 電壓 - 輸出 3:- 電壓 - 輸出 4:- 電流 - 輸出（最大值）:17A 功率（W）:204W 應(yīng)用:ITE（商業(yè)） 電壓 - 隔離:3kV 效率:87.5% 工作溫度:-25°C ~ 70°C（有降額） 特性:可調(diào)輸出，通用輸入 安裝類型:底座安裝 大小/尺寸:8.46" 長 x 4.53" 寬 x 1.18" 高（215.0mm x 115.0mm x 30.0mm） 所需最小負(fù)載:無 認(rèn)可:CB，cURus 標(biāo)準(zhǔn)包裝:1 |
| LRS-200-15 | 功能描述:O/P +15V14A 制造商:mean well usa inc. 系列:LRS-200 零件狀態(tài):在售 類型:封閉式 輸出數(shù):1 電壓 - 輸入:90 ~ 132 VAC，180 ~ 264 VAC，240 ~ 370 VDC 電壓 - 輸出 1:15V 電壓 - 輸出 2:- 電壓 - 輸出 3:- 電壓 - 輸出 4:- 電流 - 輸出（最大值）:14A 功率（W）:210W 應(yīng)用:ITE（商業(yè)） 電壓 - 隔離:3kV 效率:88% 工作溫度:-25°C ~ 70°C（有降額） 特性:可調(diào)輸出，通用輸入 安裝類型:底座安裝 大小/尺寸:8.46" 長 x 4.53" 寬 x 1.18" 高（215.0mm x 115.0mm x 30.0mm） 所需最小負(fù)載:無 認(rèn)可:CB，cURus 標(biāo)準(zhǔn)包裝:1 |
| LRS-200-24 | 功能描述:O/P +24V8.8A 制造商:mean well usa inc. 系列:LRS-200 零件狀態(tài):在售 類型:封閉式 輸出數(shù):1 電壓 - 輸入:90 ~ 132 VAC，180 ~ 264 VAC，240 ~ 370 VDC 電壓 - 輸出 1:24V 電壓 - 輸出 2:- 電壓 - 輸出 3:- 電壓 - 輸出 4:- 電流 - 輸出（最大值）:8.8A 功率（W）:211W 應(yīng)用:ITE（商業(yè)） 電壓 - 隔離:3kV 效率:89.5% 工作溫度:-25°C ~ 70°C（有降額） 特性:可調(diào)輸出，通用輸入 安裝類型:底座安裝 大小/尺寸:8.46" 長 x 4.53" 寬 x 1.18" 高（215.0mm x 115.0mm x 30.0mm） 所需最小負(fù)載:無 認(rèn)可:CB，cURus 標(biāo)準(zhǔn)包裝:1 |
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