參數(shù)資料
型號: LRI512
廠商: 意法半導(dǎo)體
英文描述: Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.
中文描述: 內(nèi)存標(biāo)簽集成電路的512位高耐力的EEPROM 13.56,ISO 15693標(biāo)準(zhǔn)符合標(biāo)準(zhǔn)的防盜
文件頁數(shù): 8/54頁
文件大小: 351K
代理商: LRI512
LRI512
8/54
COMMUNICATIONS SIGNAL FROM LRI512 TO VCD
For some parameters several modes have been
defined in order to allow for use in different noise
environments and application requirements.
Load Modulation
The LRI512 is capable of communication to the
VCD via an inductive coupling area in which the
carrier is loaded to generate a subcarrier with fre-
quency f
S
. The subcarrier is generated by switch-
ing in a load in the LRI512.
Subcarrier
The LRI512 supports the one subcarrier and two
subcarriers response formats. These formats are
selected by the VCD using the first bit in the proto-
col header.
When one subcarrier is used, the frequency f
S
1 of
the subcarrier load modulation is 423.75kHz (f
C
/
32).
When two subcarriers are used, the frequency f
S
1
is 423.75 kHz (f
C
/32), and the frequency f
S
2 is
484.28 kHz (f
C
/28). When using the two subcarri-
ers mode, the LRI512 generates a continuous
phase relationship between f
S
1 and f
S
2.
Data Rates
The LRI512 can respond using the low or the high
data rate format. The selection of the data rate is
made by the VCD using the second bit in the pro-
tocol header.
Table 4 shows the different data rates the LRI512
can achieve using each combination.
Table 4. Response Data Rate
Data Rate
One Subcarrier
Two Subcarriers
Low
6.62 kbit/s
(f
C
/2048)
6.67 kbit/s
(f
C
/2032)
High
26.48 kbit/s
(f
C
/512)
26.69 kbit/s
(f
C
/508)
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