- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379297 > LND150 (ELAN Microelctronics Corp .) N-Channel Depletion-Mode MOSFET(擊穿電壓500V，N溝道耗盡型MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | LND150 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Depletion-Mode MOSFET(擊穿電壓500V，N溝道耗盡型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道耗盡型MOSFET（擊穿電壓的500V，?馬鞍山溝道耗盡型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | LND150 |
8-15
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
BV
DGX
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
LND150
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Ordering Information
BV
DSX
/
BV
DGX
500V
R
DS(ON)
(max)
I
DSS
(min)
TO-92
TO-243AA*
Die
1.0K
1.0mA
LND150N3
LND150N8
LND150ND
Order Number / Package
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Features
ESD gate protection
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Package Options
TO-243AA
(SOT-89)
N-Channel Depletion-Mode
MOSFET
TO-92
G
S
D
S
S G D
Note: See Package Outline section for dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LND150 | N-Channel Depletion-Mode MOSFET |
| LND150N3 | N-Channel Depletion-Mode MOSFET |
| LND150N8 | N-Channel Depletion-Mode MOSFET |
| LND150ND | 2.0 WtB Dual Conn Dip Plg Hsg Assy 38Ckt |
| LND250 | N-Channel Depletion-Mode MOSFET(擊穿電壓500V，N溝道耗盡型MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LND150K1-G | 功能描述:MOSFET MOSFET DEPL-MODE 500V 1K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND150N3 | 功能描述:MOSFET 500V 1KOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND150N3(P002) | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R |
| LND150N3-G | 功能描述:MOSFET 500V 1KOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND150N3-G P002 | 制造商:Supertex Inc 功能描述:DepletionMode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。