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參數(shù)資料
| 型號(hào)： | LND250 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Depletion-Mode MOSFET(擊穿電壓500V，N溝道耗盡型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道耗盡型MOSFET（擊穿電壓的500V，?馬鞍山溝道耗盡型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | LND250 |
8-19
LND250
Advanced DMOS Technology
The LND2 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND2 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Ordering Information
BV
DSX
/
BV
DGX
500V
R
DS(ON)
(max)
I
DSS
(min)
TO-236AB*
1.0K
1.0mA
LND250K1
Order Number / Package
N-Channel Depletion-Mode
MOSFET
Features
ESD gate protection
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
BV
DGX
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Product marking for SOT-23:
NDE
F
where
F
= 2-week alpha date code
Package Options
TO-236AB
(SOT-23)
top view
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Source
Gate
Drain
Note: See Package Outline section for dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LND250 | N-Channel Depletion-Mode MOSFET |
| LND250K1 | N-Channel Depletion-Mode MOSFET |
| LOC111PTR | Linear Optocouplers |
| LOC110 | Linear Optocouplers |
| LOC110P | Linear Optocouplers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LND250K1 | 功能描述:MOSFET MOSFET, DEPLETION-MODE, 500V, 1K Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND250K1-G | 功能描述:MOSFET 500V 1KOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND2907HT | 制造商:LINEAR_DIMENSIONS 制造商全稱:LINEAR_DIMENSIONS 功能描述:10-Bit Successive Approximation Register Analog-to- |
| LND2931 | 制造商:LINEAR_DIMENSIONS 制造商全稱:LINEAR_DIMENSIONS 功能描述:100mA Low Dropout Voltage Regulator |
| LND2931-10 | 制造商:LINEAR_DIMENSIONS 制造商全稱:LINEAR_DIMENSIONS 功能描述:100mA Low Dropout Voltage Regulator |
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