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參數(shù)資料
| 型號： | LND150ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2.0 WtB Dual Conn Dip Plg Hsg Assy 38Ckt |
| 中文描述： | 30 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | LND150ND |
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
LND150
Advanced DMOS Technology
The LND1 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, volt-
age ramp generation and amplification.
Ordering Information
BV
DSX
/
BV
DGX
R
DS(ON)
(max)
I
DSS
(min)
TO-92
TO-243AA*
Die
500V
1.0K
1.0mA
LND150N3
LND150N8
LND150ND
Order Number / Package
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Features
ESD gate protection
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
N-Channel Depletion-Mode
MOSFET
Product marking for TO-243AA:
Where
= 2-week alpha date code
LN1E
Package Options
TO-243AA
(SOT-89)
TO-92
G
S
D
S
S G D
Note: See Package Outline section for dimensions.
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| LND250K1 | 功能描述:MOSFET MOSFET, DEPLETION-MODE, 500V, 1K Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| LND250K1-G | 功能描述:MOSFET 500V 1KOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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