參數(shù)資料
型號(hào): LN66F
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAs Infrared Light Emitting Diode
中文描述: 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 41K
代理商: LN66F
1
Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
1
5.0
±
0.2
2.54
2-1.0
±
0.15
2-0.6
±
0.15
7
±
0
±
0
±
0
1
±
1
3
±
0
1
±
1
1
1
2
N
1: Cathode
2: Anode
Unit : mm
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1.5
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
For light source of remote control systems
Features
High-power output, high-efficiency : I
e
= 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity :
θ
= 15 deg. (typ.)
Transparent epoxy resin package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
e
λ
P
λ
V
F
V
FP*
I
R
C
t
θ
Conditions
min
13
typ
max
Unit
mW/sr
nm
nm
V
V
μ
A
pF
deg.
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
FP
= 1.0A
V
R
= 3V
V
R
= 0V, f = 1MHz
950
50
1.35
1.50
3.0
10
20
15
The angle in which radiant intencity is 50%
*
f = 100 Hz, Duty cycle = 0.1 %
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