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參數(shù)資料
| 型號： | LM2324TMX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | XO, clock |
| 英文描述： | PLLatinum⑩ 2.0 GHz Frequency Synthesizer for RF Personal Communications |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 2200 MHz, PDSO16 |
| 封裝： | TSSOP-16 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 157K |
| 代理商： | LM2324TMX |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage (V
CC
)
Power Supply for Charge Pump (V
P
)
Voltage on Any Pin with
GND = 0V (V
I
)
Storage Temperature Range (T
S
)
Lead Temperature (solder, 4 sec.) (T
L
)
ESD - Human Body Model (Note 2)
0.3V to 6.5V
V
CC
to 6.5V
0.3V to V
CC
+ 0.3V
65C to +150C
+260C
2 kV
Recommended Operating
Conditions
(Note 1)
Power Supply Voltage (V
CC
)
Power Supply for Charge Pump (V
P
)
Operating Temperature (T
A
)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics.
Note 2:
This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should on be done on ESD
protected workstations.
2.7V to 5.5V
V
CC
to 5.5V
40C to +85C
Electrical Characteristics
(V
CC
= 3V, V
P
= 3V; 40C
<
T
A
<
85C except as specified).
Symbol
GENERAL
I
CC
I
CC
-PWDN
f
IN
OSC
in
f
PD
Pf
IN
Parameter
Conditions
Min
Typ
Max
Units
Power Supply Current
Power Down Current
f
IN
Operating Frequency
Oscillator Operating Frequency
Phase Detector Frequency
Input Sensitivity f
INB
grounded
through a 10 pF capacitor
V
CC
= 2.7V to 5.5V
3.5
10
mA
μA
GHz
MHz
MHz
0.1
5
2.0
40
10
0
0
V
CC
= 3.0V
V
CC
= 5.0V
15
10
0.4
dBm
V
OSC
CHARGE PUMP
ICP
o-source
ICP
o-sink
ICP
o-Tri
Oscillator Sensitivity
1.0
V
CC
0.3
V
PP
Charge Pump Output Current
VCP
o
= V
P
/2
4.0
4.0
mA
mA
Charge Pump TRI-STATE
Current
Charge Pump Output Current
Variation vs. Voltage (Note 4)
Charge Pump Output Current
Sink vs. Source Mismatch
(Note 4)
Charge Pump Output Current
Magnitude Variation vs.
Temperature (Note 4)
0.5
≤
VCP
o
≤
V
P
- 0.5
T = 25C
0.5
≤
VCP
o
≤
V
P
- 0.5
T = 25C
VCP
o
= V
P
/2
T = 25C
0.1
nA
ICP
o
vs.
VCP
o
ICP
o-sink
vs.
ICP
o-source
10
%
5
%
ICP
o
vs. T
VCP
o
= V
P
/2
40C
≤
T
≤
+85C
10
%
DIGITAL INTERFACE (DATA, CLK, LE, CE)
V
IH
High-Level Input Voltage
V
IL
Low-Level Input Voltage
I
IH
High-Level Input Current
I
IL
Low-Level Input Current
I
IH
Oscillator Input Current
I
IL
MICROWIRE TIMING
t
CS
Data to Clock Set Up Time
t
CH
Data to Clock Hold Time
t
CWH
Clock Pulse Width High
t
CWL
Clock Pulse Width Low
t
ES
Clock to Enable Set Up Time
t
EW
Enable Pulse Width
(Note 3)
(Note 3)
V
IH
= V
CC
= 5.5V
V
IL
= 0, V
CC
= 5.5V
V
IH
= V
CC
= 5.5V
V
IL
= 0, V
CC
= 5.5V
0.8 V
CC
V
V
μA
μA
μA
μA
0.2 V
CC
1.0
1.0
100
1.0
1.0
100
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
50
10
50
50
50
50
ns
ns
ns
ns
ns
ns
Note 3:
Except f
IN
and OSC
in
Note 4:
See related equations in charge pump current specification definitions
L
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3
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