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參數(shù)資料
| 型號： | LLE18010X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | LLE18010X |
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18010X
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications up to
2 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB
amplifier.
PINNING - SOT437A
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L1
(W)
≥
1
G
po
(dB)
≥
8.5
Z
i
; Z
L
(
)
see Figs
6 and 7
Class AB (CW)
1.85
24
10
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
1
2
3
Top view
e
c
b
MAM112
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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