參數(shù)資料
型號: LLE16350X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 103K
代理商: LLE16350X
1997 Feb 03
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
List of components
(see Figs 4 and 5)
Notes
1.
2.
In thermal contact with TR1.
In thermal contact with DUT.
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
C1, C4
C2, C3
C5, C6
C7
D1
D2
L1
transistor, BDT91 or equivalent
DC blocking chip capacitor
trimmer capacitor
feedthrough bypass capacitor
electrolytic capacitor
diode BY239 or equivalent; note 1
diode BY239 or equivalent; note 2
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
linear potentiometer
resistor
resistor
resistor
ferrite bead
100 pF
0.5 to 5.0 pF
1500 pF
10
μ
F, >30 V
ATC 100A101kp
Tekelec 727-1
Erie 1250-003
L2
P1
R1
R2
R3
F1
4.7 k
100
, 0.25 W
10 k
, 0.25 W
56
, 0.25 W
Philips tube, 12NC = 4330 030 43081
4.2
×
2.2
×
3.2 mm (4B1)
R
r
copper rivet
Fig.5 Class AB bias circuit.
handbook, full pagewidth
MEA600
C5
C6
L2
DUT
L1
C7
R3
D1
D2
P1
F1
R2
R1
TR1
VCC
BIAS CIRCUIT
PREMATCHING TEST
CIRCUIT
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