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參數(shù)資料
| 型號(hào)： | LHF16J06 |
| 廠商： | Sharp Corporation |
| 英文描述： | Flash Memory 16M (1M 】 16 / 2M 】 8) |
| 中文描述： | 閃存16M內(nèi)存（100萬】16 / 2米】8） |
| 文件頁數(shù)： | 8/47頁 |
| 文件大?。?/td> | 245K |
| 代理商： | LHF16J06 |
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LHF16J06
6
Rev. 1.26
Table 1. Pin Descriptions
Symbol
Type
Name and Function
A
-1
A
0
-A
19
INPUT
ADDRESS INPUTS: Inputs for addresses during read and write operations. Addresses are
internally latched during a write cycle.
A
-1
: Lower address input while BYTE# is V
IL
. A
-1
pin changes DQ
15
pin while BYTE# is V
IH
.
A
15
-A
19
: Main Block Address.
A
12
-A
19
: Boot and Parameter Block Address.
DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles; outputs data
during memory array, status register and identifier code read cycles. Data pins float to high-
impedance when the chip is deselected or outputs are disabled. Data is internally latched during a
write cycle. DQ
8
-DQ
15
pins are not used while byte mode (BYTE#=V
IL
). Then, DQ
15
pin
changes A
-1
address input.
CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and sense amplifiers.
CE#-high deselects the device and reduces power consumption to standby levels.
RESET: Resets the device internal automation. RP#-high enables normal operation. When driven
low, RP# inhibits write operations which provides data protection during power transitions. Exit
from reset mode sets the device to read array mode. RP# must be V
IL
during power-up.
OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on
the rising edge of the WE# pulse.
WRITE PROTECT: When WP# is V
IL
, boot blocks cannot be written or erased. When WP# is
V
IH
, locked boot blocks can not be written or erased. WP# is not affected parameter and main
blocks.
BYTE ENABLE: BYTE# V
IL
places device in byte mode (×8). All data is then input or output on
DQ
0-7
, and DQ
8-15
float. BYTE# V
IH
places the device in word mode (×16), and turns off the A
-1
input buffer.
READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is performing an
internal operation (block erase, full chip erase, word/byte write or lock-bit configuration).
RY/BY#-high Z indicates that the WSM is ready for new commands, block erase is suspended,
and word/byte write is inactive, word/byte write is suspended, or the device is in reset mode.
BLOCK ERASE, FULL CHIP ERASE, WORD/BYTE WRITE OR LOCK-BIT
CONFIGURATION POWER SUPPLY: For erasing array blocks, writing words/bytes or
configuring lock-bits. With V
CCW
≤
V
CCWLK
, memory contents cannot be altered. Block erase, full
chip erase, word/byte write and lock-bit configuration with an invalid V
CCW
(see 6.2.3 DC
Characteristics) produce spurious results and should not be attempted. Applying 12V±0.3V to
V
CCW
during erase/write can only be done for a maximum of 1000 cycles on each block. V
CCW
may be connected to 12V±0.3V for a total of 80 hours maximum.
DEVICE POWER SUPPLY: Do not float any power pins. With V
CC
≤
V
LKO
, all write attempts to
the flash memory are inhibited. Device operations at invalid V
CC
voltage (see 6.2.3 DC
Characteristics) produce spurious results and should not be attempted.
GROUND: Do not float any ground pins.
NO CONNECT: Lead is not internal connected; it may be driven or floated.
DQ
0
-DQ
15
INPUT/
OUTPUT
CE#
INPUT
RP#
INPUT
OE#
INPUT
WE#
INPUT
WP#
INPUT
BYTE#
INPUT
RY/BY#
OPEN
DRAIN
OUTPUT
V
CCW
SUPPLY
V
CC
SUPPLY
GND
NC
SUPPLY
sharp
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LHF16KA1 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA3 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA4 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA6 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA7 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
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