
LHF16J06
2
Rev. 1.26
LH28F160BJE-BTL90
16M-BIT ( 1Mbit ×16 / 2Mbit ×8 )
Boot Block Flash MEMORY
■
Low Voltage Operation
V
CC
=V
CCW
=2.7V-3.6V Single Voltage
■
User-Configurable ×8 or ×16 Operation
■
High-Performance Read Access Time
90ns(V
CC
=2.7V-3.6V)
■
Operating Temperature
0°C to +70°C
■
Low Power Management
Typ. 2μA (V
CC
=3.0V) Standby Current
Automatic Power Savings Mode Decreases I
CCR
in
Static Mode
Typ. 120μA (V
CC
=3.0V, T
A
=+25°C, f=32kHz)
Read Current
■
Optimized Array Blocking Architecture
Two 4K-word (8K-byte) Boot Blocks
Six 4K-word (8K-byte) Parameter Blocks
Thirty-one 32K-word (64K-byte) Main Blocks
Bottom Boot Location
■
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
■
Enhanced Automated Suspend Options
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
■
Enhanced Data Protection Features
Absolute Protection with V
CCW
≤
V
CCWLK
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
■
Automated Block Erase, Full Chip Erase,
Word/Byte Write and Lock-Bit Configuration
Command User Interface (CUI)
Status Register (SR)
■
SRAM-Compatible Write Interface
■
Industry-Standard Packaging
48-Lead TSOP
■
ETOX
TM*
Nonvolatile Flash Technology
■
CMOS Process (P-type silicon substrate)
■
Not designed or rated as radiation hardened
SHARP’s LH28F160BJE-BTL90 Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a wide
range of applications.
LH28F160BJE-BTL90 can operate at V
CC
=2.7V-3.6V and V
CCW
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation
capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the LH28F160BJE-BTL90 offers four levels of protection: absolute protection with V
CCW
≤
V
CCWLK
, selective
hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code
security needs.
The LH28F160BJE-BTL90 is manufactured on SHARP’s 0.25μm ETOX
TM*
process technology. It come in industry-standard
package: the 48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
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