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參數(shù)資料
| 型號(hào)： | LHF16J06 |
| 廠商： | Sharp Corporation |
| 英文描述： | Flash Memory 16M (1M 】 16 / 2M 】 8) |
| 中文描述： | 閃存16M內(nèi)存（100萬】16 / 2米】8） |
| 文件頁數(shù)： | 12/47頁 |
| 文件大?。?/td> | 245K |
| 代理商： | LHF16J06 |
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LHF16J06
10
Rev. 1.26
Table 2.1. Bus Operations (BYTE#=V
IH
)
(1,2)
RP#
CE#
OE#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
X
Mode
Notes
8
WE#
V
IH
V
IH
X
X
Address
X
X
X
X
See
Figure 4
X
V
CCW
X
X
X
X
DQ
0-15
D
OUT
High Z
High Z
High Z
RY/BY#
(3)
X
X
X
High Z
Read
Output Disable
Standby
Reset
X
X
4
Read Identifier Codes
8
V
IH
V
IL
V
IL
V
IH
X
Note 5
High Z
Write
6,7,8
V
IH
V
IL
V
IH
V
IL
X
D
IN
X
Table 2.2. Bus Operations (BYTE#=V
IL
)
(1,2)
RP#
CE#
OE#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
X
Mode
Notes
8
WE#
V
IH
V
IH
X
X
Address
X
X
X
X
See
Figure 4
X
V
CCW
X
X
X
X
DQ
0-7
D
OUT
High Z
High Z
High Z
RY/BY#
(3)
X
X
X
High Z
Read
Output Disable
Standby
Reset
X
X
4
Read Identifier Codes
8
V
IH
V
IL
V
IL
V
IH
X
Note 5
High Z
Write
NOTES:
1. Refer to DC Characteristics. When V
CCW
≤
V
CCWLK
, memory contents can be read, but not altered.
2. X can be V
IL
or V
IH
for control pins and addresses, and V
CCWLK
or V
CCWH1/2
for V
CCW
. See DC Characteristics for
V
CCWLK
voltages.
3. RY/BY# is V
OL
when the WSM is executing internal block erase, full chip erase, word/byte write or lock-bit configuration
algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with word/byte write inactive),
word/byte write suspend mode or reset mode.
4. RP# at GND±0.2V ensures the lowest power consumption.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, full chip erase, word/byte write or lock-bit configuration are reliably executed
when V
CCW
=V
CCWH1/2
and V
CC
=2.7V-3.6V.
7. Refer to Table 3 for valid D
IN
during a write operation.
8. Never hold OE# low and WE# low at the same timing.
6,7,8
V
IH
V
IL
V
IH
V
IL
X
D
IN
X
sharp
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LHF16KA1 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA3 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA4 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA6 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LHF16KA7 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
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