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參數(shù)資料
| 型號： | LH5P8129 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM |
| 中文描述： | 100萬的CMOS（128K的× 8）政務(wù)司司長，控制偽靜態(tài)存儲器 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 119K |
| 代理商： | LH5P8129 |
AC ELECTRICAL CHARACTERISTICS
1,2,3
(T
A
= 0 to +70
°
C, V
CC
= 5.0 V
±
10%)
PARAMETER
SYMBOL
LH5P8129-60
LH5P8129-80
LH5P8129-10
UNIT
NOTE
MIN.
100
165
60
40
0
15
0
15
0
0
MAX.
MIN.
130
195
80
40
0
20
0
20
0
0
MAX.
MIN.
160
235
100
50
0
25
0
25
0
0
MAX.
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
CS setup time
CS hold time
Address setup time
Address hold time
Read command setup time
Read command hold time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Output enable from end of write
Chip disable to output in High-Z
Output disable to output in High-Z
Write enable to output in High-Z
OE setup time
OE hold time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write
Data setup time from CE
Data hold time from write
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
Refresh command hold time
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width
(Auto refresh)
Refresh precharge time
(Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh
precharge (Self refresh)
t
RC
t
RMW
t
CE
t
P
t
CSS
t
CSH
t
AS
t
AH
t
RCS
t
RCH
t
CEA
t
OEA
t
CLZ
t
OLZ
t
WLZ
t
CHZ
t
OHZ
t
WHZ
t
OES
t
OEH
t
WP
t
WCS
t
WCH
t
DSW
t
DSC
t
DHW
t
DHC
t
T
t
REF
t
RHC
t
FC
t
RFD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
10,000
10,000
10,000
4
4
60
25
80
30
100
35
5
5
20
0
0
20
0
0
20
0
0
20
20
20
25
25
25
30
30
30
0
10
30
30
40
25
25
0
0
3
0
10
30
30
50
30
30
0
0
3
0
10
30
30
60
35
35
0
0
3
6
6
6
6
35
8
35
8
35
8
15
100
30
15
130
40
15
160
50
t
FAP
30
8,000
30
8,000
30
8,000
ns
t
FP
30
30
30
ns
t
FAS
8,000
8,000
8,000
ns
t
FRS
140
160
190
ns
NOTES:
1.
In order to initialize the circuit, an initial pause of 100
μ
s with
CE = V
, RFSH = V
IH
after power-up, followed by at least 8
dummy cycles.
2.
AC characteristics are measured at t
T
= 5 ns.
3.
AC characteristics are measured at the following condition (see
figure at right).
4.
Measured with a load equivalent to 2TTL + 100 pF.
5.
Address is latched at the negative edge of CE.
6.
Data is latched at the positive edge of R/W or at the positive
edge of CE.
2.4 V
0.8 V
2.6 V
0.6 V
2.2 V
0.8 V
OUTPUT
INPUT
5P8129-4
Figure 4. AC Characteristics
CMOS 1M (128K
×
8) Pseudo-Static RAM
LH5P8129
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5P8129-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129-60L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129-80L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129N-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129N-60L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
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