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參數(shù)資料
| 型號： | LH5P8129 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM |
| 中文描述： | 100萬的CMOS（128K的× 8）政務(wù)司司長，控制偽靜態(tài)存儲器 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 119K |
| 代理商： | LH5P8129 |
TRUTH TABLE
CE
CS
OE
R/W
RFSH
A
0
- A
16
I/O
1
- I/O
8
MODE
L
H
L
H
X
VX
D
OUT
Read
L
H
X
L
X
VX
D
IN
Write
L
H
H
H
X
VY
High-Z
CE only refresh
L
L
X
X
X
X
High-Z
CS standby
H
X
X
X
L
X
High-Z
Auto/Self refresh
H
X
X
X
H
X
High-Z
Standby
NOTES:
H = High at V
IN
= V
CC
+ 0.3 V to V
IH
(MIN.)
L = Low at V
IN
= V
IL
(MAX.) to -1.0 V
X = Don’t care at V
CC
+ 0.3 V to -1.0 V
VX = A
0
-A
16
address input when CE = L, then Don’t Care
VY = A
0
-A
8
address input when CE = L, then Don’t Care,
and A
9
-A
16
address = Don’t Care at V
CC
+ 0.3 V to -1.0 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Applied voltage on any pins
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
Topr
Tstg
-1.0 to +7.0
50
600
0 to +70
-65 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDI-
TIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
GND
V
IH
V
IL
4.5
0
2.4
-1.0
5.0
0
5.5
0
V
V
V
V
Input voltage
V
CC
+ 0.3
0.8
CAPACITANCE (T
A
= 0 to +70
°
C, f = 1 MHz,
V
CC
= 5.0 V
±
10%)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
- A
16
R/W, OE
CE, CS
RFSH
I/O
1
- I/O
7
C
IN1
C
IN2
C
IN3
C
IN4
C
OUT1
8
5
5
5
10
pF
pF
pF
pF
pF
Input/output capacitance
CMOS 1M (128K
×
8) Pseudo-Static RAM
LH5P8129
3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LH5P8129-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129-60L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129-80L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129N-10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5P8129N-60L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
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