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參數(shù)資料
| 型號(hào)： | LH28F800BGEBL12 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 5/38頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800BGEBL12 |
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
5
PIN DESCRIPTION (Continued)
SYMBOL
TYPE
NAME AND FUNCTION
WP
INPUT
WRITE PROTECT:
Erase blocks can be locked by writing a non-volatile lock-bit for
each block. When WP is low, those locked blocks as reflected by the Block-Lock Status
bits (BSR.6), are protected from inadvertent Data Writes or Erases. When WP is high,
all blocks can be Written or Erased regardless of the state of the lock-bits. The WP
input buffer is disabled when RP
transitions low (deep power-down mode).
BYTE
INPUT
BYTE ENABLE:
BYTE low places device x8 mode. All data is then input or output
on DQ
0
- DQ
7
, and DQ
8
- DQ
15
float. Address A
0
selects between the high and low
byte. BYTE high places the device in x16 mode, and turns off the A
0
input buffer.
Address A
1
, then becomes the lowest order address.
3.3/5.0 VOLT SELECT:
3/5
high configures internal circuits for 3.3 V operation.
3/5
low configures internal circuits for 5.0 V operation.
NOTES:
Reading the array with 3/5
high in a 5.0 V system could damage the
device. There is a significant delay from 3/5
switching to valid data.
3/5
INPUT
V
PP
SUPPLY
ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V)
: For erasing memory array blocks or
writing words/bytes/pages into the flash array.
V
CC
SUPPLY
DEVICE POWER SUPPLY (3.3 V ±0.3 V, 5.0 V ±0.5 V) (2.7 ~ 3.6 at Read Operation)
:
Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NC
NO CONNECT:
No internal connection to die, lead may be driven or left floating.
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PDF描述 |
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| LH28F800BGETL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BG | 8 M-bit (512 kB x 16) SmartVoltage Flash Memory |
| LH28F800BGB-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGB-L | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BGE-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGEBL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-BL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-TL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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