參數(shù)資料
型號(hào): LH28F800BGEBL12
廠商: Sharp Corporation
英文描述: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述: 8 M位(512 KB的× 16)SmartVoltage閃存
文件頁(yè)數(shù): 19/38頁(yè)
文件大?。?/td> 328K
代理商: LH28F800BGEBL12
8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
19
DC Characteristics
V
CC
= 3.3 V ± 0.3 V, TA = 0°C to +70°C
3/5
= Pin Set High for 3.3 V Operations
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
I
IL
I
LO
Input Load Current
±1
μA
V
CC
= V
CC
MAX., V
IN
= V
CC
or GND
V
CC
= V
CC
MAX., V
IN
= V
CC
or GND
V
CC
= V
CC
MAX.,
CE
0
, CE
1
, RP
= V
CC
±0.2 V
BYTE, WP, 3/5
= V
CC
±0.2 V or GND
±0.2 V
1
Output Leakage Current
±10
μA
1
I
CCS
V
CC
Standby Current
4
8
μA
1,4
1
4
mA
V
CC
= V
CC
MAX.,
CE
0
, CE
1
, RP
= V
IH
BYTE, WP, 3/5
= V
IH
or V
IL
I
CCD
V
CC
Deep Power-Down
Current
1
5
μA
RP
= GND ±0.2 V
1
I
CCR1
V
CC
Read Current
30
35
mA
V
CC
= V
CC
MAX.,
CMOS: CE
0
, CE
1
= GND ±0.2 V
BYTE = GND ±0.2 V or V
CC
±0.2 V
Inputs = GND ±0.2 V or V
CC
±0.2 V
TTL: CE
0
, CE
1
= V
IL,
BYTE = V
IL
or V
IH
Inputs = V
IL
or V
IH
f = 8 MHz, I
OUT
= 0 mA
V
CC
= V
CC
MAX.,
CMOS: CE
0
, CE
1
= GND ±0.2 V
BYTE = V
CC
±0.2 V or GND ±0.2 V
Inputs = GND ±0.2 V or V
CC
±0.2 V
TTL: CE
0
, CE
1
= V
IL,
BYTE = V
IH
or V
IL
Inputs = V
IL
or V
IH
f = 4 MHz, I
OUT
= 0 mA
Word/Byte Write in Progress
1, 3, 4
I
CCR2
V
CC
Read Current
15
20
mA
1, 3, 4
I
CCW
I
CCE
V
CC
Write Current
V
CC
Block Erase Current
8
12
mA
1
6
12
mA
Block Erase in Progress
1
I
CCES
V
CC
Erase Suspend
Current
3
6
mA
CE
0
, CE
1
= V
IH
Block Erase Suspended
1, 2
I
PPS
V
PP
Standby Current
V
PP
Deep Power-Down
Current
±1
±10
μA
V
PP
V
CC
1
I
PPD
0.2
5
μA
RP
= GND ±0.2 V
1
相關(guān)PDF資料
PDF描述
LH28F800BGETL12 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGETL85 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BG 8 M-bit (512 kB x 16) SmartVoltage Flash Memory
LH28F800BGB-BL12 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGB-L 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F800BGE-BL12 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGEBL85 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGE-BL85 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGETL12 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGE-TL12 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories