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參數(shù)資料
| 型號(hào)： | LH28F800BGEBL12 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 35/38頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800BGEBL12 |
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
35
AC Characteristics for Page Buffer Write Operations
1
T
A
= 0°C to +70°C
SYMBOL
PARAMETER
V
CC
= 3.3 V ± 0.3 V
UNITS
NOTE
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
120
ns
t
ELWL
CE
Setup to WE Going Low
10
ns
t
AVWL
Address Setup to WE Going Low
0
ns
3
t
DVWH
Data Setup to WE Going High
75
ns
2
t
WLWH
WE Pulse Width
75
ns
t
WHDX
Data Hold from WE High
10
ns
2
t
WHAX
Address Hold from WE High
10
ns
2
t
WHEH
CE
Hold from WE High
10
ns
t
WHWL
WE Pulse Width High
45
ns
t
GHWL
Read Recovery before Write
0
ns
t
WHGL
Write Recovery before Read
95
ns
SYMBOL
PARAMETER
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
TYP.
MIN.
MAX.
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
70
80
ns
t
ELWL
CE
Setup to WE Going Low
0
0
ns
t
AVWL
Address Setup to WE Going Low
0
0
ns
3
t
DVWH
Data Setup to WE Going High
50
50
ns
2
t
WLWH
WE Pulse Width
40
50
ns
t
WHDX
Data Hold from WE High
0
0
ns
2
t
WHAX
Address Hold from WE High
10
10
ns
2
t
WHEH
CE
Hold from WE High
10
10
ns
t
WHWL
WE Pulse Width High
30
30
ns
t
GHWL
Read Recovery before Write
0
0
ns
t
WHGL
Write Recovery before Read
60
65
ns
NOTES:
CE
is defined as the latter of CE
0
or CE
1
going Low or the first of CE
0
or CE
1
going High.
1. These are WE
controlled write timings, equivalent CE
controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE
Low pulse.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800BGETL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BG | 8 M-bit (512 kB x 16) SmartVoltage Flash Memory |
| LH28F800BGB-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGB-L | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BGE-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGEBL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-BL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-TL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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