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參數(shù)資料
| 型號(hào)： | LH28F400SUN |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
| 中文描述： | 的4Mb（512Kbit x 8256千位× 16）3.3閃存 |
| 文件頁(yè)數(shù)： | 7/35頁(yè) |
| 文件大小： | 294K |
| 代理商： | LH28F400SUN |
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4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
7
BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
Bus Operations for Word-Wide Mode (BY
TE
= V
IH
)
MODE
RP
CE
OE
WE
A
0
DQ
0-15
RY
/BY
NOTE
Read
V
IH
V
IL
V
IL
V
IH
X
D
OUT
X
1, 2, 7
Output Disable
V
IH
V
IL
V
IH
V
IH
X
High-Z
X
1, 6, 7
Standby
V
IH
V
IH
X
X
X
High-Z
X
1, 6, 7
Deep Power-Down
V
IL
X
X
X
X
High-Z
V
OH
1, 3
Manufacturer ID
V
IH
V
IL
V
IL
V
IH
V
IL
00B0H
V
OH
4
Device ID
V
IH
V
IL
V
IL
V
IH
V
IH
ID
V
OH
4
Write
V
IH
V
IL
V
IH
V
IL
X
D
IN
X
1, 5, 6
MODE
RP
CE
OE
WE
A
0
DQ
0-7
RY
/BY
NOTE
Read
V
IH
V
IL
V
IL
V
IH
X
D
OUT
X
1, 2, 7
Output Disable
V
IH
V
IL
V
IH
V
IH
X
High-Z
X
1, 6, 7
Standby
V
IH
V
IH
X
X
X
High-Z
X
1, 6, 7
Deep Power-Down
V
IL
X
X
X
X
High-Z
V
OH
1, 3
Manufacturer ID
V
IH
V
IL
V
IL
V
IH
V
IL
B0H
V
OH
4
Device ID
V
IH
V
IL
V
IL
V
IH
V
IH
ID
V
OH
4
Write
V
IH
V
IL
V
IH
V
IL
X
D
IN
X
1, 5, 6
NOTES:
1. X can be V
IH
or V
IL
for address or control pins except for RY
/BY
, which is either V
OL
or V
OH
.
2. RY
/BY
output is open drain. When the WSM is ready, Erase is suspended or the device is in deep
power-down mode, RY
/BY
will be at V
OL
if it is tied to V
CC
through a resistor. When the RY
/BY
at V
OL
is independent of OE
while a WSM operation is in progress.
3. RP
at GND ± 0.2 V ensures the lowest deep power-down current.
4. A
0
at V
IL
provide manufacturer ID codes. A
0
at V
IH
provide device ID codes. Device ID code= 21H (x8).
Device ID Code = 6621H (x16). All other addresses are set to zero.
5. Commands for different Erase operations, Data Write operations, and Lock-Block operations can only
be successfully completed when V
PP
= V
PPH
.
6. While the WSM is running, RY
/BY
in Level-Mode (default) stays at V
OL
until all operations are complete.
RY
/BY
goes to V
OH
when the WSM is not busy or in erase suspend mode.
7. RY
/BY
may be at V
OL
while the WSM is busy performing various operations. For example, a status
register read during a write operation.
8. Only to RP
, V
IH
(MIN.) = 2.4 V at TTL-level input.
Bus Operations for Byte-Wide Mode (BY
TE
= V
IL
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F400BG-L12 | 4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400BG-L85 | 4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400SU-LC | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-LC12 | 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
| LH28F400SUHN | 4M Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F400SU-NC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-LC12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
| LH28F400SUN-LC15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F400SUN-NC60 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
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